NewsMarkets

Science

Stacking induces direct band gap in MoS2 bilayers for optoelectronics

Research shows atomically aligned 1H bilayer MoS2 exhibits enhanced excitonic emission and valley polarization.

1 publisher · 1 article · first seen 23 Sept 2026 · updated 2d ago

This story has stopped developing; this page is its permanent record. More from that day

Sources

Every article we clustered into this story. Headlines link to the publisher.

  1. Stacking-induced direct band gap in CVD-grown 1H MoS 2 bilayers Nature ·